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PRINCIPES DE LA DETECTION.HOUZE RC.1977; TOUTE ELECTRON.; FR.; DA. 1977; NO 426; PP. 69-72Article

BARRIER PARAMETERS OF TUNGSTEN-NICKEL POINT CONTACT DIODESYASUOKA Y; YASUOKA T; SAKURADA T et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 8; PP. 1481-1485; BIBL. 17 REF.Article

SCHOTTKY DIODE MIXER FOR VISIBLE LASER LIGHT AND MICROWAVE HARMONICS UP TO 0.43 THZDANIEL HU; MAURER B; STEINER M et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 4; PP. 313-315; BIBL. 9 REF.Article

MECHANISM AND PROPERTIES OF POINT CONTACT W-NI DIODE DETECTORS AT 10.6 MU M.YASUOKA Y; SAKURADA T; MIYATA T et al.1978; JAP. J. APPL. PHYS.; JAP.; DA. 1978; VOL. 17; NO 1; PP. 171-176; BIBL. 18 REF.Article

LOW-LEVEL PROPERTIES OF MICROWAVE CRYSTAL DETECTORS.VAN NIE AG.1978; MULLARD TECH. COMMUNIC.; GBR; DA. 1978; VOL. 14; NO 137; PP. 265-278; BIBL. 5 REF.Article

GEOMETRICAL ASYMMETRY EFFECTS ON TUNNELLING PROPERTIES OF POINT CONTACT JUNCTIONS.LUCAS AA; MOUSSIAUX A; SCHMEITS M et al.1977; COMMUNIC. PHYS.; G.B.; DA. 1977; VOL. 2; NO 6; PP. 169-174; BIBL. 16 REF.Article

BROAD-BAND MICROWAVE VOLTMETER USING THERMOELECTRIC EFFECTS OF HOT CARRIERS.KIKUCHI K; OSHIMOTO A.1977; I.E.E.E. TRANS. INSTRUMENT. MEASUR.; U.S.A.; DA. 1977; VOL. 26; NO 4; PP. 323-328; BIBL. 10 REF.Article

AUDIOFREQUENCY NOISE IN POINT CONTACT MICROWAVE DIODES.SOLLNER TCLG; HARTLEY CL.1976; J. PHYS. E; G.B.; DA. 1976; VOL. 9; NO 9; PP. 744-745; BIBL. 4 REF.Article

COMPARISON OF METHODS FOR SENSITIVITY DETERMINATION OF POINT-CONTACT DIODES AT SUBMILLIMETER WAVELENGTH.SAUTER E; SCHULTZ GV.1977; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1977; VOL. 25; NO 6; PP. 468-470; BIBL. 6 REF.Article

EXPERIMENTAL NONLINEARITY COEFFICIENTS FOR THE TUNGSTEN-NICKEL POINT-CONTACT DIODEWHITFORD BG.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 3; PP. 428-432; BIBL. 37 REF.Article

COMMUTATION A HAUTE TENSION DANS LES STRUCTURES DE CARBURE DE SILICIUMBRODOVOJ VA; GOZAK A CH; PEKA GP et al.1976; FIZ. TEKH. POLOPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 8; PP. 1512-1515; BIBL. 10 REF.Article

RESISTANCE DEPENDENCE OF DETECTED SIGNALS OF MOM DIODESYASUOKA Y; SAKURADA T; SIU DP et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 9; PP. 5860-5864; BIBL. 17 REF.Article

THE IMPORTANCE OF GEOMETRY, FIELD AND TEMPERATURE IN TUNNELING AND RECTIFICATION BEHAVIOR OF POINT CONTACT JUNCTIONS OF IDENTICAL METALSMISKOVSKY NM; SHEPHERD SJ; CUTLER PH et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 7; PP. 560-562; BIBL. 29 REF.Article

DC BIAS DEPENDENCE OF W-NI AND W-CO POINT-CONTACT DIODES AS HARMONIC GENERATORS AND MIXERS AT 9.4 MU MKUROSAWA T; SAKURAI T; TANAKA K et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 9; PP. 751-754; BIBL. 12 REF.Article

EFFECT OF GEOMETRY AND MULTIPLE-IMAGE INTERACTIONS ON TUNNELING AND I-V CHARACTERISTICS OF METAL-VACUUM-METAL POINT-CONTACT JUNCTIONSMISKOVSKY NM; CUTLER PH; FEUCHTWANG TE et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 2; PP. 189-192; BIBL. 18 REF.Article

DETECTEUR INFRAROUGE SIMPLE ET EFFICACE.MAILLOT P; TESTA P; THENARD C et al.1977; C.R. ACAD. SCI., A; C.R. ACAD. SCI., B; FR.; DA. 1977; VOL. 285; NO 11; PP. 259-261; ABS. ANGL.; BIBL. 8 REF.Article

AC ELECTROLYTIC POINTING OF TUNGSTEN WIRE FOR SILICON RECTIFERS AND PROBES.RAGHU RAJ SINGH.1977; RES. AND INDUSTRY; INDIA; DA. 1977; VOL. 22; NO 3; PP. 173-174; BIBL. 1 REF.Article

A BROADBAND SCHOTTKY POINT CONTACT MIXER FOR VISIBLE LASER LIGHT AND MICROWAVE HARMONICSDANIEL HU; MAURER B; STEINER M et al.1983; APPLIED PHYSICS. B, PHOTOPHYSICS AND LASER CHEMISTRY; ISSN 0721-7269; DEU; DA. 1983; VOL. 30; NO 4; PP. 189-193; BIBL. 8 REF.Article

IMPROVED POINT-CONTACT DIODES USING RARE EARTHSFRAYNE PG; BOOTON MW; CHANDLER N et al.1982; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1982; VOL. 15; NO 8; PP. 1451-1457; BIBL. 15 REF.Article

NONLINEAR MECHANISM OF I-V CHARACTERISTICS OF MBM DIODES IN LOW VOLTAGE REGIONNAGASHIMA A; AKAHANE T; TAKO T et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 6; PP. 1117-1126; BIBL. 13 REF.Article

INFLUENCE OF A MECHANICAL MODULATION ON ELECTRICAL TRANSPORT IN POINT-CONTACT JUNCTIONSTHIELEMANS M; LEO V; DELTOUR R et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 9; PP. 5841-5846; BIBL. 5 REF.Article

HIGH-ORDER SUBMILLIMETER MIXING IN POINT-CONTACT AND SCHOTTKY DIODES.ZUIDBERG BFJ; DYMANUS A.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 10; PP. 643-645; BIBL. 4 REF.Article

Microwave point contact diode responsivity improvement through surface effects in vacuumKOPEIKA, N. S; HIRSCH, I; RAVFOGEL, M et al.IEEE transactions on microwave theory and techniques. 1984, Vol 32, Num 10, pp 1384-1387, issn 0018-9480Article

POINT-CONTACT DIODE SUBMILLIMETER DETECTORSFRAYNE PG; CHANDLER N; BOOTON MW et al.1978; J. PHYS. D; GBR; DA. 1978; VOL. 11; NO 17; PP. 2391-2400; BIBL. 18 REF.Article